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A study conducted by researchers from Australian National University and the manufacturer Longi has analyzed dopant distributions in silicon wafers. According to the report in pv magazine, the team used photoluminescence imaging to examine wafers grown by the RCz method and doped with antimony, phosphorus, and gallium.
The imaging technique revealed that all three dopant types exhibited highly uniform radial concentration profiles across the wafers. This level of uniformity is considered suitable for the production of high-efficiency solar cells. Quantitative analysis indicated that radial dopant concentrations had standard deviations of less than 10% from the center to the edge of a wafer. Phosphorus-doped wafers showed the highest radial uniformity, with deviations below approximately 4%, compared to about 5% for antimony-doped and 8% for gallium-doped samples.
The research also compared axial uniformity along the length of the silicon ingot. Antimony-doped wafers maintained relatively stable axial distributions, while phosphorus-doped wafers showed a marked increase in variation toward the ingot tail. Additional annealing experiments confirmed that the variations observed in the photoluminescence images originated from the dopants themselves and not from oxygen-related thermal donors.
The study concluded that the RCz technique can produce wafers with very low radial dopant variation. It highlighted that antimony-doped wafers provide a more uniform doping profile along the ingot, indicating their potential for use in next-generation photovoltaic manufacturing.
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