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An international research team has reported TPP-Zn surface engineering for wide-bandgap all-inorganic CsPbIBr2 PSCs. The method used tetraphenyl-porphine zinc over the perovskite active layer to reduce residues, surface defects, and charge recombination. The optimized 0.16 sq cm device has achieved 13.47% conversion efficiency (PCE), 1.29 V VOC, 82.3% FF, and 12.69 mA/sq cm JSC. Compared with untreated devices, PCE has increased from 9.55% to 13.47%, while JSC rose from 10.37 mA/sq cm to 12.69 mA/sq cm. FF improved from 73% to 82.3%, and 2.5 mg mL-1 TPP-Zn treatment produced 654 nm average grains. Control films had 401 nm average grains, while 5 mg mL-1 films had 529 nm average grains. A larger 1.02 cm2 device achieved 11.29% PCE, while SCAPS-1D modeling aligned with experimental results. The findings indicate a device-engineering route for wide-bandgap inorganic perovskite cells, with stated potential for tandem PV integration. Treated devices maintained more than 70% initial efficiency for over 240 h under 40% RH and retained about 82% initial efficiency during stability testing.
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