Sharp adds 0.2% efficiency to record triple-junction InGaAs solar cell

Posted on April 28, 2013 by Ritesh Pothan
The latest efficiency improvement was due to further indium, gallium, and arsenide material combination optimization that improved light absorption across the various wavelengths.

Further tweaks of its triple-junction InGaAs InGaAs (indium gallium arsenide) solar cell have led to Sharp reporting a new 37.9% record conversion efficiency.

The company had previously reported in December 2012 a new record of 37.7%. The latest efficiency improvement was due to further indium, gallium, and arsenide material combination optimization that improved light absorption across the various wavelengths.

As before, the work was carried out with support from the New Energy and Industrial Technology Development Organization (NEDO), while the results were verified by the National Institute of Advanced Industrial Science and Technology (AIST).

Source: PV Tech

 

About Ritesh Pothan

Ritesh Pothan, is an accomplished speaker and visionary in the Solar Energy space in India. Ritesh is from an Engineering Background with a Master’s Degree in Technology and had spent more than a decade as the Infrastructure Head for a public limited company with the last 9 years dedicated to Solar and Renewable Energy. He also runs the 2 largest India focused renewable energy groups on LinkedIn - Solar - India and Renewables - India
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